Research Fellow in III-V Epitaxy for Optoelectronics

This Research Fellow position focuses on developing advanced III-V semiconductor materials and integrated optoelectronic devices on silicon. Responsibilities include optimizing epitaxial growth using MOVPE, characterizing materials and devices, and contributing to fabrication and integration. Essential qualifications are a PhD in a relevant field and hands-on experience in III-V epitaxy.

• The successful candidate will join a multidisciplinary team developing advanced III-V semiconductor materials and integrated optoelectronic devices on silicon.
• The research programme focuses on the development of innovative epitaxial growth technologies for the integration of III-V materials on silicon and other lattice-mismatched platforms, enabling next-generation photonic devices for optical communications, sensing and emerging quantum technologies.
• The successful candidate will also contribute to device fabrication and integration activities within Southampton's internationally renowned silicon photonics and nanofabrication facilities.
• During the initial phase of the project, the postholder will work closely with external epitaxy facilities and project partners to undertake growth campaigns and advance the research programme while new III-V epitaxy infrastructure is established at Southampton.
• You will be expected to disseminate research findings through high-quality publications and conference presentations, while helping to develop new research directions and collaborative opportunities.

• You should hold a PhD (or near completion) in Electronic Engineering, Photonics, Physics, or a closely related discipline.
• Hands-on experience in the epitaxial growth of III-V semiconductors, including III-As/P/Sb and/or III-nitride materials using metal-organic vapour phase epitaxy (MOVPE) or molecular beam epitaxy (MBE), is essential.