Research Fellow in Advanced Semiconductor Device Modelling

This is a full-time Research Fellow position focused on advanced modelling and simulation of source-gated and multimodal transistors within an EPSRC project. Key responsibilities include developing and validating predictive models using techniques like TCAD, compact modelling, or AI-assisted methods, and integrating them with experimental data. Applicants require a PhD in a relevant field and demonstrable expertise in at least one advanced semiconductor device modelling approach.

• The holder will undertake research on EPSRC project EP/Y000196/1 under the supervision of the principal investigator, with particular responsibility for developing and validating advanced modelling and simulation approaches for source-gated transistors (SGTs) and multimodal transistors (MMTs).
• The role may focus on high-fidelity TCAD, compact modelling, or advanced numerical and AI-assisted modelling, according to the successful candidate's expertise and the needs of the project.
• The role will undertake modelling and simulation research within EPSRC project EP/Y000196/1, developing and validating predictive models of SGT and MMT devices using appropriate techniques such as TCAD, compact modelling, surrogate modelling and physics-informed machine learning.
• Working closely with the experimental team, the postholder will incorporate relevant device physics and manufacturing effects, fit and validate models against measured data, and use these models to inform device and circuit design.
• You will also produce high-quality research outputs, including publications, reusable models and simulation frameworks, maintain appropriate documentation, present findings at conferences and workshops, and contribute where appropriate to student mentoring, research proposals, external collaborations and international dissemination activities.

• A PhD in Electronic Engineering, Semiconductor Device Physics, computational or numerical modelling, or a closely related discipline.
• Demonstrable expertise in at least one of high-fidelity TCAD, compact modelling, or advanced numerical/AI-assisted modelling of semiconductor devices, supported by publicly verifiable technical outputs.
• The post holder must be capable of exercising academic judgement, selecting and developing appropriate modelling approaches, critically interpreting results, and working closely with experimental data to ensure that models remain physically meaningful and grounded in measured behaviour.
• This is a full-time (1.0 FTE), fixed-term post (up to July 2027) on EPSRC project EP/Y000196/1, starting as soon as the recruitment process permits.
• The role is primarily computational but requires close engagement with experimental device data and may involve national or international travel for collaboration and dissemination.